Novel sub-100 nm thin film transistors

15 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (8) , 713-714
https://doi.org/10.1049/el:19930477

Abstract

A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

Keywords

FIELD-EFFECT TRANSISTORS
SIDEWALL SPACERS
1 TO 100 MICRON
METAL ELECTRODES
MOSFET
FET
THIN FILM TRANSISTORS
LIFTOFF PROCESS
POLYMER TRANSISTORS
TFT

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