Optical energy gaps of β-In2S3 thin films grown by spray pyrolysis
- 1 October 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7) , 2631-2633
- https://doi.org/10.1063/1.337137
Abstract
β‐In2S3 thin films for which x varied from 2.0 to 3.9 with the x composition of the spray solution (In2Sx) were grown on thoroughly cleaned glass slides by the spray pyrolysis method with the substrate temperature maintained at 350 °C and a rate of spray of 6 ml/min. The energy gap of the grown β‐In2S3 thin film was 2.20 eV, indicating an indirect transition, whereas that of In2S3.9 increased to 2.43 eV.This publication has 3 references indexed in Scilit:
- Optical Absorption Edge Investigation of CdIn2S4 and β‐In2S3 CompoundsPhysica Status Solidi (b), 1985
- Vapour growth of three In2S3 modifications by iodine transportJournal of Crystal Growth, 1975
- Photoconductivity in indium sulfide powders and crystalsJournal of Physics and Chemistry of Solids, 1959