Extremely low threshold current 1.52 μm InGaAsP/InP MS-DFB lasers with second-order grating
- 17 July 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (15) , 802-803
- https://doi.org/10.1049/el:19860550
Abstract
Threshold currents of 1.52 μm InGaAsP/InPGaAsP/InP DFB lasers with second-order gratings have been reduced to 12 mA in single-longitudinal-mode operation. External differential efficiencies exceed 25%/feet with a λ/4 Si3N4 coating on the front facet.Keywords
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