Quantum dots in quantum well structures
- 31 October 1996
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 70 (1-6) , 108-119
- https://doi.org/10.1016/0022-2313(96)00048-8
Abstract
No abstract availableThis publication has 88 references indexed in Scilit:
- Band filling at low optical power density in semiconductor dotsApplied Physics Letters, 1995
- Observation of both heavy- and light-hole excitons in (25–60)-nm diameter GaAs-(Al,Ga)As quantum dotsPhysical Review B, 1995
- Temperature dependent time-resolved exciton luminescence in GaAs/AlGaAs quantum wires and dotsSuperlattices and Microstructures, 1995
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substratesApplied Physics Letters, 1994
- Initial growth stage and optical properties of a three-dimensional InAs structure on GaAsJournal of Applied Physics, 1994
- InAs quantum dots in a single-crystal GaAs matrixPhysical Review B, 1991
- Threshold current density of GaInAsP/InP quantum-box lasersIEEE Journal of Quantum Electronics, 1989
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986