Very thin PbI2 single crystals grown by a hot wall technique
- 11 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1337-1339
- https://doi.org/10.1063/1.97899
Abstract
A hot wall technique was applied to grow PbI2 thin films of about 100 nm thickness on cleaved surfaces of CdI2 single crystals. The band‐edge exciton absorption spectra were investigated for the films grown in various conditions. A very sharp exciton absorption line of 8.8 meV half‐width was obtained in a PbI2 single‐crystal film grown at a 75 °C substrate temperature. The sharpness of the exciton line proved the excellent quality of the PbI2 film and the usefulness of the technique.Keywords
This publication has 9 references indexed in Scilit:
- Growth conditions and characterization of InGaAs/GaAs strained layers superlatticesJournal of Applied Physics, 1984
- PbTe-Pb1−xSnxTe superlattices prepared by a hot wall techniqueJournal of Applied Physics, 1980
- Faraday rotation and surface excitons in PbI2Solid State Communications, 1975
- The band gap excitons in PbI2Journal of Physics and Chemistry of Solids, 1975
- The use of a phase diagram as a guide for the growth of PbTe filmsApplied Physics Letters, 1975
- Band-Edge Excitons in Pb: A Puzzle?Physical Review Letters, 1972
- Exciton Magnetic Circular Dichroism of PbPhysical Review Letters, 1971
- The optical absorption spectra of metal iodides with layer structuresJournal of Physics and Chemistry of Solids, 1968
- The exciton spectrum of lead iodideJournal of Physics and Chemistry of Solids, 1965