Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- 1 February 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (2S)
- https://doi.org/10.1143/jjap.35.1509
Abstract
We have successfully deposited SiNx:H films at temperatures as low as 350°C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si2Cl6) and hydrazine (N2H4). The atomic ratio (N/Si) of the film deposited at 400°C was 1.26 with a total hydrogen content of about 30 at.%. The breakdown-field strength was 5.3 MV/cm at a leakage-current density of 1 µA/cm2, and the low-field resistivity was more than 1015 Ω·cm. Amorphous-silicon thin-film transistors equipped with this film as the gate dielectric showed clear transfer characteristics.Keywords
This publication has 0 references indexed in Scilit: