Deep level analysis in heterostructure field-effect transistors by means of the photo-FET method
- 1 May 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (5) , 693-697
- https://doi.org/10.1109/T-ED.1986.22553
Abstract
The photo-FET method, a fast and simple room-temperature method for deep level analysis, was applied to heterostructure field-effect transistors for the first time. Well-known donor-like and several unknown acceptor-like levels were detected. By comparing heterostructures and homogeneously doped AlGaAs layers, GaAs- and AlGaAs-related traps could be separated. For comparison, similar samples were investigated independently by photocapacitance- and by low-frequency noise measurements. It was shown experimentally that superlattice buffers reduce the influence of GaAs related traps on the FET current. A simple model is proposed which relates the trap ionization in the AlGaAs to the carrier variation in the TEG.Keywords
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