LDMOS transistors with implanted and deposited surface layers
- 1 January 1985
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings I Solid State and Electron Devices
- Vol. 132 (4) , 177-180
- https://doi.org/10.1049/ip-i-1.1985.0038
Abstract
The effects of ion-implanted layers together with deposited surface films on resurfed LDMOS transistors is studied. The specific on-resistance of lateral DMOS transistors is calculated and compared for two types of device, the ‘resurfed’ structure and a surface implanted SIPOS covered structure. Device parameters are first chosen so as to give 600 V breakdown for each type. It is shown that an LDMOS device with a surface implanted layer and SIPOS overlay gives superior performance with respect both to on resistance and insensitivity of the breakdown voltage to fluctuations in substrate doping density.Keywords
This publication has 1 reference indexed in Scilit:
- Techniques of Finite ElementsJournal of Applied Mechanics, 1980