TEM AND EBIC INVESTIGATIONS OF POLYCRYSTALLINE SILICON SHEETS GROWN BY THE RAD GROWTH PROCESS

1 October 1982

journal article
Published by EDP Sciences in Le Journal de Physique Colloques

Vol. 43 (C1) , C1-129
https://doi.org/10.1051/jphyscol:1982118

Abstract

This article reports on results of observations by transmission electron microscopy (TEM) of electrically active (and inactive) grain boundaries in polycrystalline silicon layers grown by the RAD growth process. In samples taken after a pulling length of several meters, the grain boundaries (GB's) are not characterized by exact twin relationships. Precipitates are present in GB's near the free surface

Keywords

EBIC INVESTIGATIONS
RAD GROWTH
SILICON SHEETS
TEM
POLYCRYSTALLINE
GROWN

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