Measurement of absorption coefficients of Ga _0.47 In _0.53 As over the wavelength range 1.0–1.7 μm

5 December 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (25-26) , 1187-1189
https://doi.org/10.1049/el:19850839

Abstract

The absorption coefficient of p⁺-, p⁻-and n⁻-doped Ga_0.47In_0.53As layers, grown lattice-matched to InP, has been calculated over the wavelength range 1.0–1.7 μm from transmission and reflection measurements.

Keywords

TRANSMISSION
ABSORPTION COEFFICIENTS
GA0.47IN0.53AS LAYERS
WAVELENGTH 1 TO 1.7 MICRONS
III-V SEMICONDUCTOR
REFLECTION

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Measurement of absorption coefficients of Ga 0.47 In 0.53 As over the wavelength range 1.0–1.7 μm

Abstract

Keywords

Measurement of absorption coefficients of Ga _0.47 In _0.53 As over the wavelength range 1.0–1.7 μm