2 MeV He microbeam damage in Si and GaAs
- 1 March 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 54 (1-3) , 197-203
- https://doi.org/10.1016/0168-583x(91)95513-d
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Semiconductor analysis with a channeled helium microbeamNuclear Instruments and Methods in Physics Research, 1981
- Metastable As-concentrations in Si achieved by ion implantation and rapid thermal annealingJournal of Applied Physics, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Beam Effects in the Analysis of As-Doped Silicon by Channeling MeasurementsApplied Physics Letters, 1972
- Flux and fluence dependence of disorder produced during implantation of11B in siliconRadiation Effects, 1971
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969