Size-dependent Photoconductivity in MBE-Grown GaN−Nanowires
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- 22 March 2005
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 5 (5) , 981-984
- https://doi.org/10.1021/nl0500306
Abstract
We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.Keywords
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