Ultrahigh-voltage high-current gate turn-off thyristors
- 1 December 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 31 (12) , 1681-1686
- https://doi.org/10.1109/T-ED.1984.21771
Abstract
High-power GTO's with ratings of 2500 V . 2000 A have been developed, and a 4500 V . 2000 A GTO was trial fabricated and performance tested, for use in traction motor control equipment. Their low ON-state voltage was attained by applying a unique anode emitter shorting structure which does not require doping of a lifetime killer such as gold to obtain suitable GTO characteristics. Their high interrupt current was obtained by introducing a ring-shaped gate structure which has uniform operation between many segments in the devices during turn-off process.Keywords
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