An experimental determination of the carrier lifetime near the SiSiO2 interface
- 28 February 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (2) , 221-227
- https://doi.org/10.1016/0038-1101(73)90032-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Influence of surface conditions on silicon planar transistor current gainSolid-State Electronics, 1967
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957