I n s i t u infrared diagnostics of particle forming etch plasmas

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Abstract
I n situ Fourier transform infrared absorption techniques are employed to characterize the gas-phase plasma species and etch products present in halocarbon containing plasmas which produce particles. A correlation is demonstrated between the distribution of these species and the extent of particle formation as measured by laser light scattering. The effects of the presence of silicon and the addition of oxygen on both the plasma species distribution and the degree of light scattering are also characterized. Additionally, x-ray photoelectron spectroscopy (XPS) and infrared (IR) microscopic techniques are employed to determine the chemical composition of the particulate material which is found on the silicon wafer after etching.
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