Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy
- 1 May 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 247 (1) , 1-12
- https://doi.org/10.1016/0039-6028(91)90189-y
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- Protective overlayer techniques for preparation of InSb(001) surfacesSurface Science, 1990
- Coupled plasmon and phonon excitations in the space-charge layer on GaAs(110) surfacesPhysical Review B, 1989
- Growth of CdTe-InSb multilayer structures on (100) InSb substrates using molecular beam epitaxyApplied Physics Letters, 1988
- Electron energy loss spectroscopy applied to semiconductor space charge layersVacuum, 1988
- Observation of a quasi-two-dimensional electron gas at an InSb/CdTe interfaceApplied Physics Letters, 1986
- Observation of interfacial plasmons on MBE-grown GaAs by high-resolution electron-energy-loss spectroscopySolid State Communications, 1986
- A high resolution EELS study of free-carrier variations in H+2/H+ bombarded (100)GaAsJournal of Vacuum Science & Technology B, 1984
- Low energy electronic and vibronic excitations of semiconductor surfacesSurface Science, 1983
- Surface composition changes in GaAs due to low-energy ion bombardmentSurface Science, 1981
- Conduction-Band Surface Plasmons in the Electron-Energy-Loss Spectrum of GaAs(110)Physical Review Letters, 1981