The physics of the tunnel diode
- 1 December 1961
- journal article
- Published by IOP Publishing in British Journal of Applied Physics
- Vol. 12 (12) , 654-659
- https://doi.org/10.1088/0508-3443/12/12/304
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Excess Tunnel Current in Silicon Esaki JunctionsPhysical Review B, 1961
- Theory of TunnelingJournal of Applied Physics, 1961
- Observation of Stark Splitting of Energy Bands by Means of Tunnelling TransitionsPhysical Review Letters, 1960
- Physical principles of the esaki diode and some of its properties as a circuit elementSolid-State Electronics, 1960
- A new device using the tunneling process in narrow p-n junctionsSolid-State Electronics, 1960
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960
- Observation of Direct Tunneling in GermaniumPhysical Review Letters, 1959
- Direct Observation of Phonons During Tunneling in Narrow Junction DiodesPhysical Review Letters, 1959
- Tunnel Diodes as High-Frequency DevicesProceedings of the IRE, 1959
- New Phenomenon in Narrow GermaniumJunctionsPhysical Review B, 1958