The adsorption of Sb on InAs(110) studied by photoemission and photoelectron diffraction
- 1 July 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 331-333, 619-624
- https://doi.org/10.1016/0039-6028(95)00329-0
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopySurface Science Reports, 1993
- Atomic geometries of InP(110)-Sb(1 ML) and GaAs(110)-Sb(1 ML)Physical Review B, 1992
- Growth and atomic geometry of bismuth and antimony on InP(110) studied using low-energy electron diffractionPhysical Review B, 1992
- Dynamical low-energy electron-diffraction analysis of bismuth and antimony epitaxy on GaAs(110)Physical Review B, 1990
- Photovoltaic effects in photoemission studies of Schottky barrier formationJournal of Vacuum Science & Technology B, 1990
- A new spherical-wave approximation for photoelectron diffraction, EXAFS and MEEDJournal of Physics: Condensed Matter, 1990
- Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopyPhysical Review B, 1989
- Valence-band offset and interface formation in ZnTe/GaSb(110) studied by photoemission using synchrotron radiationJournal of Vacuum Science & Technology B, 1988
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982