Intrinsic microcrystalline silicon deposited by remote PECVD: a new thin-film photovoltaic material
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1614-1618
- https://doi.org/10.1109/pvsc.1990.111882
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Properties of the SiH bond-stretching absorption band in a-Si:H grown by remote plasma enhanced CVD (RPECVD)Journal of Non-Crystalline Solids, 1987
- Optical and electrical properties of a-Si:H films grown by remote plasma enhanced chemical vapor deposition (RPECVD)Journal of Non-Crystalline Solids, 1987
- Plasma enhanced chemical vapor deposition: Differences between direct and remote plasma excitationJournal of Vacuum Science & Technology A, 1987
- Deposition of silicon dioxide and silicon nitride by remote plasma enhanced chemical vapor depositionJournal of Vacuum Science & Technology A, 1986