Heteroepitaxial TiN Films Grown by Reactive Ion Beam Epitaxy at Room Temperature
- 1 November 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (11B) , L1692
- https://doi.org/10.1143/jjap.32.l1692
Abstract
Reactive ion beam epitaxy with an extra-low energy N2 + ion beam and a Ti molecular beam has been employed to grow hetero-epitaxial TiN films on MgO substrates. The TiN film quality drastically depends on the N2 + kinetic energy. Epitaxial TiN films with a low resistivity about 16 µΩ·cm were obtained at a kinetic energy of 50 eV/atom even at room substrate temperature, which is the lowest epitaxial temperature so far. At an elevated temperature, epitaxial growth was observed at a wide kinetic energy range. Epitaxial growth mechanisms in low energy reactive ion beam deposition are discussed.Keywords
This publication has 2 references indexed in Scilit:
- Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor depositionApplied Physics Letters, 1992
- Growth and properties of single crystal TiN films deposited by reactive magnetron sputteringJournal of Vacuum Science & Technology A, 1985