Phosphorus Incorporation during Silicon Epitaxial Growth in a CVD Reactor

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Abstract
The phosphorus incorporation process during the deposition of silicon epitaxial films in a conventional chemical vapor deposition (CVD) system has been investigated. This was carried out by studying the steady‐state and the transient behaviors of a epitaxial system. The behavior of the system was also compared to that of the system. These dopant incorporation processes behave differently in that one is controlled by thermodynamics (phosphorus) and the other by kinetics (arsenic). An epitaxial doping model was used to explain these differences and to simulate the behavior of the epitaxial system. The model was capable of simulating epitaxial dopant profiles corresponding to various time‐varying phosphine gas flows in two different CVD systems.

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