Nitrogen, oxygen, and argon incorporation during reactive sputter deposition of titanium nitride

Publisher Website
Google Scholar
Abstract
For the reactive sputter deposition of titanium nitride, stress and resistivity of the films has been measured as a function of the processing variables target power, substrate bias, pressure, and N2/Ar ratio. These studies were limited to the conditions that produce titanium nitride of stoichiometry near 1. Through Rutherford backscattering spectroscopy, the changes in stress and the conductivity of the films as a function of the processing variables were interpreted in terms of nitrogen, argon, and oxygen concentration in the films. The increase in resistivity of the films correlates with increased oxygen incorporation and the increase in compressive stress of the films correlates with increased argon incorporation. The amount of oxygen in the films appears to produce a unique value of resistivity but the argon concentration that produces a given compressive stress is a function of the processing parameters that control argon incorporation.

This publication has 0 references indexed in Scilit: