Bulk III-V Compound Semi-Conductor Crystal Growth
- 2 January 1989
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in AT&T Technical Journal
- Vol. 68 (1) , 29-42
- https://doi.org/10.1002/j.1538-7305.1989.tb00644.x
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The dynamic gradient freeze growth of InPJournal of Crystal Growth, 1989
- The Growth and Characterization of Large Size, High Quality, InP Single CrystalsJournal of the Electrochemical Society, 1988
- The Production of High Quality, III-V Compound Semiconductor CrystalsAT&T Technical Journal, 1986
- A novel application of the vertical gradient freeze method to the growth of high quality III–V crystalsJournal of Crystal Growth, 1986
- A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystalsJournal of Applied Physics, 1981
- Stacking fault energy and ionicity of cubic III–V compoundsPhysica Status Solidi (a), 1978
- Impurity effect on the growth of dislocation-free InP single crystalsJournal of Applied Physics, 1976