Application of focused ion beam technology to maskless ion implantation in a molecular beam epitaxy grown GaAs or AlGaAs epitaxial layer for three-dimensional pattern doping crystal growth

1 May 1986

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 4 (3) , 933-938
https://doi.org/10.1116/1.573759

Abstract

We report on a new microfabrication process in UHV, implemented with a focused ion beam implanter (FIBI)–molecular beam epitaxy (MBE) crystal growth system with a computer controlled ion beam writing system. By using this combination process technology, GaAs/AlGaAs multilayer pattern doping structures are fabricated by iteration of growing a molecular beam epitaxy (MBE) GaAs or AlGaAs layer followed by implanting focused ion beams, arbitrarily choosing such impurity ions as Be ( p-type) or Si (n-type). This process technology is considered as a basis for integrating optical or electrical devices three dimensionally. An application of this technology to a new structure for an AlGaAs/GaAs DH laser is also described.

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