Electron transport in NiCr-O thin films at low temperatures
- 25 December 1989
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 1 (51) , 10379-10390
- https://doi.org/10.1088/0953-8984/1/51/011
Abstract
Starting from measurements of the DC conductivity sigma (T) in the temperature range from 0.05 to 300 K, the authors can qualitatively describe the electron transport in NiCr-O thin films at low temperatures by its dependence on the atomic oxygen concentration cO. At a critical value of cO a metal-insulator transition occurs near T=0. In the metallic region the electrical behaviour can be interpreted in terms of weakly localised electrons including electron correlation. In the non-metallic region an activated temperature dependence is found which is due to variable-range hopping of strongly localised electrons.Keywords
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