Intersubband relaxation of hot carriers in coupled quantum wells
- 1 October 1990
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 175-184
- https://doi.org/10.1117/12.20743
Abstract
We use an ensemble Monte Carlo simulation of coupled electrons, holes and polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. Our simulated results are in good agreement with experimental results in modulation doped quantum wells and coupled double well structures where we find that the intersubband relaxation time is controlled by the spatial overlap of the subband envel ope wavefuncti ons.Keywords
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