Single electron tunneling and suppression of short-channel effects in submicron silicon transistors
- 1 November 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (9) , 5052-5056
- https://doi.org/10.1063/1.368753
Abstract
We report measurements on submicron metal–oxide–semiconductor field effect transistors equipped with a gate on three sides of the channel. At room temperature, a strong suppression of short-channel effects has been achieved for the narrowest channels. At liquid helium temperatures, the same devices exhibit clear conductance oscillations in the subthreshold regime, indicating that a quantum dot has formed in the disordered channel.This publication has 18 references indexed in Scilit:
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