CADMIUM TELLURIDE SURFACE BARRIER DETECTORS
- 15 November 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (10) , 432-436
- https://doi.org/10.1063/1.1653259
Abstract
The pulse height response for α particles incident upon Au n‐type CdTe surface barrier counters has been investigated. The energy required to form an electron‐hole pair in this material, by comparison with the specific energy loss per pair in silicon detectors, was found to be 4.46 eV at 300°K and 4.75 eV at 77°K.Keywords
This publication has 7 references indexed in Scilit:
- Mécanisme de génération-recombinaison dans les jonctions p-n de tellurure de cadmiumJournal de Physique, 1969
- Charge Transport in Semiconductor Detectors with Trapping and DetrappingIEEE Transactions on Nuclear Science, 1968
- CdTe as a gamma detectorNuclear Instruments and Methods, 1967
- Evaluation of CdTe by Nuclear Particle MeasurementsJournal of Applied Physics, 1967
- Some Properties of a Double Acceptor Center in CdTePhysical Review B, 1964
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- High-Purity CdTe by Sealed-Ingot Zone RefiningJournal of the Electrochemical Society, 1963