Point Defect Thermodynamics of Compound Semiconductors and their Alloys
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 101 references indexed in Scilit:
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- The region of existence of CuInS2Materials Research Bulletin, 1979
- Phase studies in the system mercury selenide - manganese selenideMaterials Research Bulletin, 1977
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Electrical Properties, Optical Properties, and Band Structure of CuGaand CuInPhysical Review B, 1971
- Thermoelectric Power of Single-Crystal p-Type PbSeJournal of Applied Physics, 1969
- The Diffusion of Lead and Bismuth into Single Crystals of Undoped and Bismuth-Doped Lead Sulfide at 700°CJournal of Applied Physics, 1968
- Electron Mobility in GaSb at 77°KPhysical Review B, 1967