Stability of highly Be-doped GaAs/GaInP HBTs grown by chemical beam epitaxy

13 May 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (10) , 903-905
https://doi.org/10.1049/el:19930603

Abstract

GaAs/GaInP heterojunction bipolar transistors grown by chemical beam epitaxy with highly Be-doped base layers have been found to be stable under electrical stress. The devices did not exhibit any DC current gain change when operated at a collector current density of 4 × 10⁴ A/cm² and an emitter collector voltage of 3 V for 100 h.

Keywords

EMITTER COLLECTOR VOLTAGE
HETEROJUNCTION BIPOLAR TRANSISTORS
CHEMICAL BEAM EPITAXY
GAINP-GAAS:BE
HIGHLY BE-DOPED BASE LAYERS
100 HR
3 V
STABILITY
DC CURRENT GAIN
ELECTRICAL STRESS

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