Ions implanted into TiO2 rutile single crystals: Lattice disorder, lattice site occupation and conductivity
- 1 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 624-628
- https://doi.org/10.1016/s0168-583x(96)01137-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Lattice location and electrical conductivity in Sb-implanted rutilePhysical Review B, 1997
- Lattice disorder distribution and recovery in Hg implanted TiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Lattice location and electrical conductivity in ion implanted TiO2 single crystalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- La-, Sn- and Hf-implanted in TiO2 single crystals: lattice disorder and lattice site locationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Channeling studies of Hf implanted into TiO2 single crystals: Lattice disorder and lattice locationMaterials Chemistry and Physics, 1994
- Electrical conductivity in niobium implanted TiO2 rutileNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Lattice disorder and behavior of implanted atoms in In-implanted TiO2 (rutile)Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Lattice site occupation of non-soluble elements implanted in metalsMaterials Science Reports, 1987
- Electron transport properties in rutile from 6 to 40 KJournal of Applied Physics, 1983
- Ion-impact chemistry in the system titanium-oxygen (studies on bombardment-enhanced conductivity—III)Journal of Physics and Chemistry of Solids, 1975