Comments on "A device model for buried-channel CCD's and MOSFET's with Gaussian impurity profiles
- 1 November 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (11) , 2168-2169
- https://doi.org/10.1109/T-ED.1980.20171
Abstract
In the above paper, an expression for the silicon-surface potential in the ion-implanted channel region of a depletion MOST includes both the flat-band voltage VFBand the potential difference Δ between the conduction band and the Fermi level. It is shown here that Δ is inherently included in VFBhence, the original expression requires correction.Keywords
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