The Apparatus and Technique for Growing Large Specimens of Single Crystal Zinc
- 1 May 1934
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 5 (5) , 187-190
- https://doi.org/10.1063/1.1751823
Abstract
The apparatus and technique are described for the growth of large, strain‐free, single crystals of zinc of any desired orientation. It is shown that a gross mosaic structure may occur in the beginning of the growth of a crystal but may be eliminated by a steep temperature gradient. The data show the necessity of satisfying certain growth conditions, namely, that the ratio of the temperature gradient to the rate of growth must be near a certain favorable, but not necessarily the same, value for each orientation.Keywords
This publication has 6 references indexed in Scilit:
- Mosaic Crystals of ZincJournal of Applied Physics, 1934
- Thermoelectric Power of Single Crystal Bismuth Near the Melting PointPhysical Review B, 1932
- Some Electrical Properties of Spectroscopically Pure Zinc CrystalsPhysical Review B, 1931
- Resistivity of Single Crystal ZincPhysical Review B, 1931
- An Experimental Study of the Growth of Zinc Crystals by the Czochralski-Gomperz MethodPhysical Review B, 1929
- The study of the specific resistance of bismuth crystals and its change in strong magnetic fields and some allied problemsProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1928