Galvanomagnetic Properties of n-Type HgCr2Se4

Publisher Website
Google Scholar
Abstract
HgCr2Se4 crystals have been grown from the vapor. Se annealing gives p-type samples whereas Hg annealing gives n-type materials. The low temperature mobility of n-type HgCr2Se4 is about 2000 cm2/V·s. A jump of the resistivity appears around T c. Under high applied field this jump completely disappears (Δρ/ρ=-0.99 at T c under 150 kOe). A defect model is proposed in which Se vacancies act as doubly charged donors and Hg as an acceptor. The carrier density can be controlled by heat treatment. A band scheme consistent with the available data is proposed.

This publication has 0 references indexed in Scilit: