Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications
- 9 October 2003
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 200 (1) , 168-174
- https://doi.org/10.1002/pssa.200303468
Abstract
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