Preparation of surfaces for high quality interface formation

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Abstract
Successful fabrication of Ohmic contacts, Schottky barriers, and metal–metal contacts for multilevel metallization in integrated circuits requires very careful preparation of the substrate surface. As device dimensions shrink, this becomes increasingly more important. This paper reviews various surface treatments that are used to prepare surfaces for metal–film deposition. These include: wet chemical treatments, temporary protection techniques, glow discharge sputter etching, ion-beam sputter etching, and plasma surface treatments using reactive gases. Because of serious problems with all other methods of surface preparation, it is concluded that plasma surface treatments should be used for small-geometry devices. The implications of this to the design of metallization equipment are described.

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