Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopy
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 367-370
- https://doi.org/10.1016/0022-0248(89)90420-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effect of growth sequence on the band discontinuities at AlAs/GaAs (100) and (110) heterojunction interfacesJournal of Vacuum Science & Technology B, 1987
- Commutativity and transitivity of GaAs-AlAs-Ge(100) band offsetsPhysical Review B, 1986
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependenceJournal of Vacuum Science and Technology, 1981
- Precise Determination of the Valence-Band Edge in X-Ray Photoemission Spectra: Application to Measurement of Semiconductor Interface PotentialsPhysical Review Letters, 1980