Amorphous Silicon Thin Films Prepared by Hot Wire Cell Method and Its Application to Solar Cells

15 April 2003

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 42 (Part 1, No) , 1521-1525
https://doi.org/10.1143/jjap.42.1521

Abstract

Amorphous Si (a-Si:H) and microcrystalline Si (µc-Si:H) materials were successfully deposited by the Hot Wire Cell method. We have studied these materials from the viewpoint of improving their qualities and the solar cell performances. As a result, it was found that the peak at 2100 cm^-1 which originates from Si–H₂ bonding in the infrared absorption spectra could be dramatically reduced at a low deposition pressure of 10 mTorr. Furthermore, it was shown by secondary ion mass spectroscopy (SIMS) analysis that the concentrations of O and C atoms in a-Si:H films could be reduced to the order of 10¹⁸ cm^-3 at low deposition pressures of 1–10 mTorr. The conversion efficiency of 7.5% was achieved for superstrate-type pin a-Si solar cells with a deposition rate of 0.4 nm/s under AM1.5 insolation.

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