Advanced e-beam lithography system in producing high-quality reticle for 64M-DRAM

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Abstract
Reticle specifications (line width accuracy, pattern stitching accuracy, overlay accuracy) required for 64M-DRAM are 0.05 for individual items. It is very hard for current Electron Beam Lithography systems (EBL) to produce high quality reticles and keep through-put the same as the current EBL. In order to satisfy 64M-DRAM application the HL-700M has thoroughly been evaluated and modified to meet 0.05 ?m specification. A highly accurate electron beam correction program and a bordering exposure program were developed in order to improve line width accuracy. A rigid stage chamber construction and temperature control units have been developed in order to improve stitching and overlay accuracy. Line width accuracy (0.05 ?m) was confirmed. Stitching accuracy (0. 05 ?m) and overlay accuracy (0. 06 ?m) were obtained, which is 2 times the accuracy of the current HL-700M. The advanced HL-700M is under development for improvements.

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