Preparation of ZnTe-InAs Heterojunctions by Liquid-Phase Epitaxy
- 1 June 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (6) , 813
- https://doi.org/10.1143/jjap.10.813
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Epitaxial Vapor Growth of ZnTe on InAsJapanese Journal of Applied Physics, 1970
- ZnTe-InAs heterojunctions†International Journal of Electronics, 1969
- Self-Compensation Limited Conductivity in Binary Semiconductors. I. TheoryPhysical Review B, 1964
- Epitaxial Growth and Properties of ZnTe-CdS HeterojunctionsJournal of the Electrochemical Society, 1963