High-resolution LEED profile analysis and diffusion barrier estimation for submonolayer homoepitaxy of Ag/Ag(100)
- 15 May 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (19) , 12544-12549
- https://doi.org/10.1103/physrevb.57.12544
Abstract
We present a high-resolution low-energy electron diffraction study of two-dimensional island distributions formed by depositing 0.3 ML of Ag on Ag(100). The substrate temperature ranged between 170 and 295 K. From the ring structure or “splitting” of the diffraction profiles, we determine the behavior of the spatial correlation length characterizing the island distribution. The precise relationship between this correlation length and the mean island separation is also determined via an analysis of kinematic diffraction from island distributions in a realistic model of nucleation and growth. Resulting estimates of this separation are consistent with those based on results from a previous scanning tunneling microscopy study at 295 K. From the Arrhenius behavior of the correlation length, we estimate a terrace diffusion barrier for Ag on Ag(100) of with a vibrational prefactor of about
Keywords
This publication has 32 references indexed in Scilit:
- Formation and Equilibration of Submonolayer Island Distributions in Ag/Ag(100) HomoepitaxyLangmuir, 1998
- The initial stages of homoepitaxy: scanning tunneling microscopy experiments and Monte Carlo simulationsJournal of Crystal Growth, 1997
- LEED studies of defects at surfaces and interfacesSurface Science, 1986
- Measurement of surface defects by low-energy electron diffractionApplied Physics A, 1984
- Atomic correlations during the first stages of epitaxyJournal of Vacuum Science & Technology A, 1984
- Spot profile analysis (LEED) of defects at silicon surfacesSurface Science, 1983
- LEED studies of surface imperfectionsApplications of Surface Science, 1982
- LEED-investigations and work-function measurements of the first stages of epitaxy of tungsten on tungsten (110)Journal of Applied Physics, 1980
- Quantitative evaluation of random distributed steps at interfaces and surfacesSurface Science, 1978
- Atomic steps on single crystals: Experimental methods and propertiesApplied Physics A, 1976