Static characteristics of extremely thin gate oxide m.o.s. transistors
- 11 December 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (25-26) , 618-620
- https://doi.org/10.1049/el:19750471
Abstract
The drain current of an extremely thin gate oxide m.o.s. transistor shows an exponential dependence both on drain voltage and gate voltage, even in the ‘postthreshold’ region. The input gate current of a device with 20 Å gate oxide is estimated to be negligible for a logic-circuit operation with 0.2 V supply voltage.Keywords
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