Charge transport in oxygen-doped polysilicon layers on Si

1 January 1978

journal article
Published by EDP Sciences in Revue de Physique Appliquée

Vol. 13 (12) , 821-824
https://doi.org/10.1051/rphysap:019780013012082100

Abstract

It is shown that layers of polysilicon doped with oxygen (polydox) can be used for the passivation of underlying p-n junctions. The conduction mechanism was derived from measurements in layers directly deposited on to silicon crystals. At room temperature we found Poole-Frenkel conduction changing at higher temperatures, presumably, to hopping in localized states.

Keywords

ELECTRONIC CONDUCTION IN CRYSTALLINE SEMICONDUCTOR THIN FILMS
ELEMENTAL SEMICONDUCTORS
OXYGEN
P N HOMOJUNCTIONS
PASSIVATION
POOLE FRENKEL EFFECT
SILICON
P N JUNCTIONS
POLYDOX
CHARGE TRANSPORT
POOLE FRENKEL CONDUCTION
O DOPED POLY SI LAYERS

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