Techniques for Melt-Growth of Luminescent Semiconductor Crystals under Pressure

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Abstract
Wide‐bandgap III–V and II–VI binary semiconductor crystals can be grown from the melt by a variety of methods, all requiring pressure. The necessary apparatus, from the simple to the sophisticated, has been investigated. Methods using resistance or rf heating, unsupported or supported ampoules of several materials, without or with high‐pressure autoclave, under inert or active gas pressure, and the required control systems, are described. A broad description of the liquid encapsulation method is given, and construction details are contained in the figures. Special attention is given to the growth of gallium phosphide crystals and to the preparation of the starting material from the elements.

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