Characterization of CuInSe2 Thin Films by Photoluminescence Measurements
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S3)
- https://doi.org/10.7567/jjaps.32s3.54
Abstract
PL measurement has been clearly demonstrated to be an effective technique not only to evaluate the quality of CIS-based thin films but also to investigate the CIS formation process during the selenization stage. The studies investigating the dependence of the PL spectrum on the excitation intensity and the effect of post-annealing in air clarified that the PL spectrum of CIS thin films was dominated by a donor-acceptor (D-A) pair emission and even in a 5 min post-annealing, the PL peak of as-deposited CIS films drastically shifted from 0.93 eV (1340 nm) to about 0.89 eV (1400 nm).Keywords
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