Well-size dependence of electro-optic effects in GaInAsP/InP quantum wells grown by GSMBE
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 349-352
- https://doi.org/10.1016/0022-0248(92)90416-g
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Optoelectronic devices by GSMBEJournal of Crystal Growth, 1990
- Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1989
- Electric-Field-Induced Localization and Oscillatory Electro-optical Properties of Semiconductor SuperlatticesPhysical Review Letters, 1988
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982