Novel InGaAs/GaAs quantum dot structures formed in tetrahedral-shaped recesses on (111)B GaAs substrate using metalorganic vapor phase epitaxy
- 10 July 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (2) , 256-258
- https://doi.org/10.1063/1.114685
Abstract
We report a novel GaAs/InGaAs/GaAs quantum dot structure formed in a tetrahedral-shaped recess (TSR) patterned on a (111)B GaAs substrate with anisotropic chemical etching. The pseudomorphic heterostructure shows two clear photoluminescence peaks which are attributed to an In anisotropic incorporation on (111)B compared to (111)A. Cathodoluminescence at a lower energy peak with InGaAs of 2.5 nm shows a bright image at the bottom of TSRs which indicates the local minimum in potential energy at the bottom of TSR.Keywords
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