Characterization of reactively sputtered WNx film as a gate metal for self-alignment GaAs metal–semiconductor field effect transistors
- 1 November 1986
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 4 (6) , 1392-1397
- https://doi.org/10.1116/1.583463
Abstract
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