Two-electron impurity states in GaP:O
- 7 August 1975
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 8 (15) , 2455-2462
- https://doi.org/10.1088/0022-3719/8/15/019
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Theory for the binding energies of the first-row, deep donors in GaP and SiSolid State Communications, 1974
- Calculations of impurity states in semiconductors: II. GaP:OJournal of Physics C: Solid State Physics, 1973
- Force-Constant Changes due to Impurities in GaAs and GaPPhysical Review B, 1973
- Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and ConcentrationPhysical Review B, 1973
- Analysis of methods for calculating spectral properties in solidsJournal of Computational Physics, 1972
- Determination of optical ionization cross sections in GaP using charge storage and impurity photovoltaic effectSolid-State Electronics, 1971
- Band Structure and Impurity StatesPhysical Review B, 1969
- Localized Defects in SemiconductorsPhysical Review B, 1967