Quarter-micron gate length microwave high electron mobility transistor
- 13 October 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (21) , 894-896
- https://doi.org/10.1049/el:19830609
Abstract
Quarter-micron gate length high electron mobility transistors have been fabricated using an electron-beam direct-writing technique. A maximum stable gain of 10 dB at 18 GHz has been measured at room temperature. A room-temperature cutoff frequency fT as high as 45 GHz has also been obtained.Keywords
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